• Part: BF420
  • Description: NPN Silicon Transistor
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 238.50 KB
Download BF420 Datasheet PDF
Continental Device India
BF420
DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg . 420 300 300 5 500 800 6.4 2.75 22 -55 to +150 422 250 250 UNITS V V V m A m W m W/ºC W Data Shee m W/ºC ºC Rth(j-a) Rth(j-c) 156 45 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION 422 IC=1.0m A,IB=0 VCEO >250 Collector Emitter Voltage- VCBO IC=100µA.IE=0 Collector Base Voltage >250 Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VEBO ICBO IEBO h FE VCE(sat) VBE(sat) IE=100µA, IC=0 VCB=200V,IE=0 VEB=5.0V, IC=0 IC=25m A,VCE=20V IC=20m A,IB=2m A IC=20m A,IB=2m A >5 <10 <100 >50 <0.5...