Continental Device India BF423
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL 423 421 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 250 300 250 300 5 500 800 6.4 2.75 22 -55 to +150 THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 156 45ELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage* VCEO IC=1.0mA,IB=0 Collector Base Voltage VCBO IC=100µA.IE=0 EmitterBase Voltage VEBO IE=100µA, IC=0 Collector-Cut off Current ICBO VCB=200