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BF494 - (BF494 / BF495) NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

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Part number BF494
Manufacturer CDIL
File Size 99.82 KB
Description (BF494 / BF495) NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
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Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current (DC) Collector Current(peak value) Total Power dissipation up to Tamb = 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient VCEO VCBO VEBO IC ICM Ptot Tj, Tstg Value 20 30 5 30 30 300 -55 to +150 UNITS V V V mA mA mW mW/ºC ºC Rth(j-a) 420 K/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Min ICBO VCB=20V,IE

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