ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise) DESCRIPTION
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current (DC) Collector Current(peak value) Total Power dissipation up to Tamb = 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient VCEO VCBO VEBO IC ICM Ptot Tj, Tstg Value 20 30 5 30 30 300 -55 to +150 UNITS V V V mA mA mW mW/ºC ºC Rth(j-a) 420 K/W ELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Otherwise Specified) DESCRIPTION
SYMBOL TEST CONDITION Min ICBO VCB=20V,IE=0 Collector Cut- off Current Collector Cut - off Current EmitterCut off Current Base Emitter Voltage DC Current Gain BF494 BF494A BF494B BF 495 BF 495C BF 495D ICBO IEBO VBE(ON) hFE * VCB=20V,IE=0 Ta =150 ºC VEB=4V, IC=0 VCE=10V,IC=1mA IC=1mA,VCE=10V 0.65 67 200 110 35 65 40 Max 500 4.0 500 0.74 221 500 215 125 135 85 UNITS nA µA nA V Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL RF TRANS...
Continental Device India
