BF959 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CDIL

General Description

SYMBOL VALUE Collector Emitter Voltage VCEO 20 Collector Base Voltage VCBO 30 Emitter Base Voltage VEBO 3 Collector Current Continuous IC 100 Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Power Dissipation @ Tc=25ºC PD 1.5 Derate Above 25ºC 12 Operating And Storag

📥 Download Datasheet

BF959 npn silicon planar epitaxial transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	BF959
Manufacturer	CDIL
File Size	109.17 KB
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Datasheet	BF959 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BF959	VHF Transistor	Motorola Inc
BF959	VHF Transistor	ON Semiconductor
BF959	NPN Silicon RF Transistor	Siemens Semiconductor Group
BF95N50L	N-Channel MOSFET	BYD
BF95N50T	N-Channel MOSFET	BYD

Other Datasheets by CDIL

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF959 TO-92 Plastic Package BF 959 IS A SILICON NPN TRANSISTOR INTENDED FOR USE AT VERY HIGH FREQUENCIES. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Collector Emitter Voltage VCEO 20 Collector Base Voltage VCBO 30 Emitter Base Voltage VEBO 3 Collector Current Continuous IC 100 Power Dissipation @ Ta=25ºC PD 625 Derate Above 25ºC 5.0 Power Dissipation @ Tc=25ºC PD 1.5 Derate Above 25ºC 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.