Datasheet4U Logo Datasheet4U.com

BSV15 Datasheet PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Manufacturer: CDIL

Datasheet Details

Part number BSV15
Manufacturer CDIL
File Size 87.96 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Download BSV15 Download (PDF)

General Description

SYMBOL BSV15 BSV16 BSV17 UNIT Collector -Emitter Voltage VCEO 40 60 80 V Collector -Emitter Voltage VCES 40 60 90 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current (DC) IC 1.0 A Base Current (DC) IB 200 mA Power Dissipation up to Tamb=25 degC Ptot 0.8 W Power Dissipation up to Tcase=25 degC 5.0 W Power Dissipation up to Tmb=50 degC 5.0 W Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 220 K/W Junction to Case Rth(j-c) 35 K/W Junction to Mounting Base Rth(j-mb) 30 K/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BSV15 BSV16 BSV17 UNIT Collector-Cut off Current ICES VBE=0, VCE=40V <100 - - nA VBE=0,

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BSV15 BSV16 BSV17 TO- 39 ABSOLUTE MAXIMUM.