Continental Device India BSV15
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BSV15 |
|---|---|
| Datasheet | BSV15 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL BSV15 BSV16 BSV17 UNIT Collector -Emitter Voltage VCEO 40 60 80 V Collector -Emitter Voltage VCES 40 60 90 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current (DC) IC 1.0 A Base Current (DC) IB 200 mA Power Dissipation up to Tamb=25 degC Ptot 0.8 W Power Dissipation up to Tcase=25 degC 5.0 W Power Dissipation up to Tmb=50 degC 5.0 W Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 220 K/W Junction to Case Rth(j-c) 35 K/W Junction to Mounting Base Rth(j-mb) 30 K/WELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION BSV15 BSV16 BSV17 UNIT Collector-Cut off Current ICES VBE=0, VCE=40V <100 - - nA VBE=0,
