Continental Device India BU109
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR
| Part No. | BU109 |
|---|---|
| Datasheet | BU109 Download |
| Manufacturer |  Continental Device India |
| Description | NPN HIGH VOLTAGE SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Emitter Voltage (VBE= -1.5V) Collector Current Collector Peak Current (Repetitive) Collector Peak Current (t=10ms) Base Current Total Power Dissipation@ Tc<25ºC Juntion Temperature Storage Temperature THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO VCBO VEBO VCEV IC ICM ICM IB Ptot Tj Tstg VALUE 150 330 6.0 330 7.0 10.0 15.0 4.0 60 150 -65 To+150 UNITS V V V V A A A A W ºC ºC Rth(j-a) Rth(j-c) 70 2.08 ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Cut off Current SYMBOL ICES ICES ICES Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Turn off Time IEBO VCE(Sat) * VBE(Sat) * fT toff TEST CONDITION VCE=330V, VBE=0 VCE=200V, VBE=0 VCE=200V, VBE=0 TC=150ºC VEB=6V, IC=0 IC=5A,IB=0.5A IC=5A,IB=0.5A IC=0.5A, VC...
