Datasheet Details
| Part number | BU109 |
|---|---|
| Manufacturer | CDIL |
| File Size | 190.52 KB |
| Description | NPN HIGH VOLTAGE SILICON POWER TRANSISTOR |
| Datasheet | BU109_CDIL.pdf |
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Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.
| Part number | BU109 |
|---|---|
| Manufacturer | CDIL |
| File Size | 190.52 KB |
| Description | NPN HIGH VOLTAGE SILICON POWER TRANSISTOR |
| Datasheet | BU109_CDIL.pdf |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Emitter Voltage (VBE= -1.5V) Collector Current Collector Peak Current (Repetitive) Collector Peak Current (t=10ms) Base Current Total Power Dissipation@ Tc<25ºC Juntion Temperature Storage Temperature THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO VCBO VEBO VCEV IC ICM ICM IB Ptot Tj Tstg VALUE 150 330 6.0 330 7.0 10.0 15.0 4.0 60 150 -65 To+150 UNITS V V V V A A A A W ºC ºC Rth(j-a) Rth(j-c) 70 2.08 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Cut off Current SYMBOL ICES ICES ICES Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Turn off Time IEBO VCE(Sat) * VBE(Sat) * fT toff TEST CONDITION VCE=330V, VBE=0 VCE=200V, VBE=0 VCE=200V, VBE=0 TC=150ºC VEB=6V, IC=0 IC=5A,IB=0.5A IC=5A,IB=0.5A IC=0.5A, VCE=10V IC=5A, IB end = 0.5A MIN MAX 5.0 100 1.0 1.0 1.0 1.2 10 0.75 UNITS mA µA mA mA V V MHz us *Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5% Continental Device India Limited Data Sheet Page 1 of 3 BU109 TO-3 Metal Can Package TO-3 Metal Can Package A B C DIM A B C D E F G H J K L M MIN.
— — 6.35 0.96 — 29.90 10.69 5.20 16.64 11.15 — 3.84 MAX.
39.37 22.22 8.50 1.09 1.77 30.40 11.18 5.72 17.15 12.25 26.67 4.19 E D J 2 H G L 1 M 3 2 1 PIN CONFIGURATION 1.
| Brand Logo | Part Number | Description | Manufacturer |
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BU109 | NPN Transistor | INCHANGE |
| Part Number | Description |
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