Continental Device India BU508A
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
| Part No. | BU508A |
|---|---|
| Datasheet | BU508A Download |
| Manufacturer |  Continental Device India |
| Description | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC Unless Specified Otherwise )DESCRIPTION
SYMBOL VALUE Collector -Base Voltage VCBO 1500 Collector -Emitter Voltage Emitter Base Voltage VCEO VEBO 700 5.0 Collector Current IC 5 Total Power Dissipation up to Tc=25 ºC Ptot 50 Junction Temperature Tj 150 Storage Temperature Tstg - 55 to +150ELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Cut off Current ICEO VCE=800V, IB=0 Collector Cut off Current Emitter Cut off Current ICBO IEBO VCB =800V, IE =0 VEB =4V, IC =0 Collector Emitter Voltage VCEO IC=50mA, IB =0 DC Current Gain Collector Emitter Saturation Voltage hFE VCE (sat) IC=1A, VCE=5V IC=5A, IB =1A MIN 160 8 UNIT V V V
