BZV55C3V6 - SILIICON PLANAR ZENER DIODES

CDIL

General Description

Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Tem

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BZV55C3V6 siliicon planar zener diodes by CDIL - Datasheet Preview

Datasheet Details

Part number	BZV55C3V6
Manufacturer	CDIL
File Size	291.12 KB
Description	SILIICON PLANAR ZENER DIODES
Datasheet	BZV55C3V6 Datasheet

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Full PDF Text Transcription (Reference)

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR ZENER DIODES BZV55C 3V6 to 75V SOD - 80C Mini MELF (LL-34) Polarity : Cathode is indicated by a blue band Hermetically Sealed, Glass Silicon Diodes ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10 mm x 10 mm x 0.