Continental Device India BZV55C47
SILIICON PLANAR ZENER DIODES
| Part No. | BZV55C47 |
|---|---|
| Datasheet | BZV55C47 Download |
| Manufacturer |  Continental Device India |
| Description | SILIICON PLANAR ZENER DIODES |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange=50ºC Up to Ta=50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t=100µs, Tj=150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10 mm x 10 mm x 0.6 mmELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise) Working Voltage* Temperature Device Differential * +/- 5% Coefficient Resistance VZ(V) Sz(mV/K) rdiff(Ω) @ IZ test=5mA @ IZ test=5mA @ IZ test=5mA min max max min max BZV55C 3V6 3.40 3.80 90 -3.5 0 BZV55C 3V9 3.70 4.10 90 -3.5 0 BZV55C 4V3 4.00 4.60 90 -3.5 0 BZV55C 4V7 4.40 5.00 80 -3.5 0.2 BZV55C 5V1 4.80 5.40 60 -2.7 1.2 BZV55C 5V6 5.20 6.00 40 -2.0 2.5 BZV55C 6V2 5.80 6.60 10 0.4 3.7 BZV55C 6V8 6.40 7.20 15 1.2 4.5 BZV55C 7V5 7.0...
