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BZX79C27 - SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

Download the BZX79C27 datasheet PDF. This datasheet also covers the BZX79C2V4 variant, as both devices belong to the same silicon glass passivated 0.5watt zener diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BZX79C2V4-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZX79C27
Manufacturer CDIL
File Size 161.53 KB
Description SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
Datasheet download datasheet BZX79C27 Datasheet

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Other Datasheets by CDIL

Part Number Description
BZX79C20 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C22 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C24 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C2V4 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C2V7 SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications when Hermetcally Sealed in Glass with Double Stud This Glass Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1.