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BZX83C12 - SILIICON PLANAR ZENER DIODES

This page provides the datasheet information for the BZX83C12, a member of the BZX83C2V7 SILIICON PLANAR ZENER DIODES family.

Datasheet Summary

Description

Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.2 V D

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Datasheet Details

Part number BZX83C12
Manufacturer CDIL
File Size 221.71 KB
Description SILIICON PLANAR ZENER DIODES
Datasheet download datasheet BZX83C12 Datasheet
Additional preview pages of the BZX83C12 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODES IS/ISO 9002 Lic# QSC/L-000019.3 BZX83C 2V7 to 56V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) DESCRIPTION Power Dissipation Junction Temperature Storage Temperature Thermal Resistance - Junction to Ambient in free air SYMBOL PTA Tj Tstg Rth(j-a) VALUE 500 175 - 55 to +175 300 UNIT mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Forward Voltage @ IF=200mA VF < 1.
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