Continental Device India C44C11
NPN SILICON EPITAXIAL POWER TRANSISTORS
| Part No. | C44C11 |
|---|---|
| Datasheet | C44C11 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON EPITAXIAL POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
Complementary C45C SeriesABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak * Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 C44C11 70 90 60 80 5 4 6 2 1.67 30 -55 to +150 Thermal Resistance Junction to Ambient Junction to Case Rth (j-a) Rth (j-c) 75 4.2ELECTRICAL CHARACTERISTICS
(Tc=25º C unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN TYP Collector- Emitter Sustaing Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VCEO(sus)* IC=1
