Datasheet4U Logo Datasheet4U.com

C44C8 - NPN SILICON EPITAXIAL POWER TRANSISTORS

Description

Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 C44C11 70 90 60 80 5 4

📥 Download Datasheet

Datasheet preview – C44C8

Datasheet Details

Part number C44C8
Manufacturer CDIL
File Size 96.35 KB
Description NPN SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet C44C8 Datasheet
Additional preview pages of the C44C8 datasheet.

📁 Similar Datasheet

  • C44C8 - Power Transistors (RECTRON)
  • C44C11 - Power Transistors (RECTRON)
  • C4400 - OCXO 4-Pin Dip Surface Mount Package (Vectron International)
  • C4400 - 2SC4400 (Sanyo)
  • C4401 - 2SC4401 (Sanyo)
  • C4402 - 2SC4402 (Sanyo)
  • C4403 - 2SC4403 (Sanyo)
  • C4404 - 2SC4404 (Sanyo)
  • C4405 - 2SC4405 (Sanyo)
  • C4406 - 2SC4406 (Sanyo)
Other Datasheets by CDIL
  • C44C11 - NPN SILICON EPITAXIAL POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak * Base Current Continuous Power Dissipation TA=25ºC TC=25ºC Operating & Storage Junction Temperature Range SYMBOL VCES VCEO VEBO IC ICM IB PD Tj, Tstg C44C8 C44C11 70 90 60 80 5 4 6 2 1.67 30 -55 to +150 Thermal Resistance Junction to Ambient Junction to Case Rth (j-a) Rth (j-c) 75 4.
Published: |