Continental Device India C45C11
PNP SILICON EPITAXIAL POWER TRANSISTORS
| Part No. | C45C11 |
|---|---|
| Datasheet | C45C11 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON EPITAXIAL POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
(Ta=25deg C)DESCRIPTION
SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak* ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 30 30 Operating and Storage Junction Tj, Tstg -55 to +150 55 to +150 Temprature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 75 75 Junction to Case Rth(j-c) 4.2 4.2ELECTRICAL CHARACTERISTICS
(TC=25 deg C Unless Specified)DESCRIPTION
SYMBOL TEST CONDITION MIN TYP Collector Emitter Sustaining Voltage VCEO(sus)* IC=100mA, IB=0 C45C5 45 - C45C11 80 - Collector Cutt off Current ICES VCE=Rated VCES - - Emitte
