CC5401 Datasheet PDF | Continental Device India

Continental Device India CC5401

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor D

Part No.	CC5401
Datasheet	CC5401 Download
Manufacturer	Continental Device India
Description	PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
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APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO Emitter -Base Voltage IC Collector Current Continuous PD Power Dissipation @Ta=25 degC Derate Above 25 deg C PD Power Dissipation @Tc=25 degC Derate Above 25 deg C Tj Junction Temperature Tstg Storage Temperature THERMAL RESISTANCE Rth(j-c) Junction to Case Rth(j-a) Junction to Ambient

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN VCEO* IC=1uA,IB=0 150 Collector -Emitter Voltage VCBO IC=100uA.IE=0 160 Collector -Base Voltage VEBO IE=10uA, IC=-0 5.0 Emitter -Base Voltage ICBO VCB=160V, IE=0 Collector-Cut off Current Ta=100 deg C VCB=160V, IE=0 VCE=150V, IB=0 VEB=4V, IC=0 IC=1mA,VCE=5V IC=10mA,VCE=5V IC=50mA,VCE=5V VALUE 150 160 5.0 600 625 5.0 1.5 12 150 -55 to +150 83.3 200 TYP MAX 50 UNIT V V V mA mW mw/deg C W mw/deg C deg C deg C deg C/W deg C/W UNIT V V V nA 50 80 50 - Emitter-Cut off Current DC Curr...