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CD13002 Datasheet PDF

Continental Device India CD13002

The TO-92 Package, Tape and Ammo Pack Drawings are correct as on the date of issue/revision of this Data Sheet. The currently valid dimensions and information, may please be confirmed from the TO-92 Drawing in the Packages and Packing Section of the Product Catalogue.
Part No. CD13002
Datasheet CD13002 Download
Manufacturer
Continental Device India
Description NPN SILICON PLANAR EPITAXIAL / HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR
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CD13002 datasheet page 1 preview

DESCRIPTION

SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak PD Power Dissipation Operating And Storage Junction Tj, Tstg Temperature Range VALUE 600 400 9.0 1.0 1.5 1.0 - 55 to +150 UNIT V V V A A W ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION VCBO IC=1mA, IE=0 Collector Base Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VEBO IE=1mA, IC=0 Emitter Base Voltage ICBO VCB=600V, IE = 0 Collector Cut Off Current I VCE=400V, IB = 0 Collector Cut Off Current CEO IEBO VEB=9V, IC=0 Emitter Cut Off Current hFE VCE=5V, IC=0.1A DC Current Gain VCE=5V, IC=400mA VCE (sat) IC=100mA, IB=50mA Collector Emitter Saturation Voltage IC=230mA, IB=50mA Base Emitter Saturation Voltage Fall Time Storage Time Transition Frequency MARKING VBE (sat) tf ts fT CD 13002 IC=100mA, IB=50mA IC=0.11A IC=0.1A, IB1= IB2=0.05A VCE=10V, IC=0.1A,f=1MHz MIN 600 400 9.0 TYP 15 5.0 0.
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