CD8550 Datasheet PDF | Continental Device India

Continental Device India CD8550

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CD8550
Datasheet	CD8550 Download
Manufacturer	Continental Device India
Description	PNP SILICON PLANAR TRANSISTOR
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 25 40 6.0 2.0 1.0 -55 to +125 UNIT V V V A W deg C

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN VCEO IC=10mA, IB=0 25 Collector -Emitter Voltage VCBO IC=100uA, IE=0 40 Collector -Base Voltage VEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=20V, IE=0 Collector Cut off Current IEBO VEB=4V, IC=0 Emitter Cut off Current hFE IC=5mA,VCE=1V 45 DC Current Gain IC=100mA,VCE=1V* 85 IC=800mA,VCE=1V 40 Collector Emitter Saturation Voltage VCE(Sat) IC=800mA,IB=80mA VBE(Sat) IC=800mA,IB=80mA Base Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Transition Frequency TYP - MAX 500 100 300 0.50 1.2 UNIT V V V nA nA V V Cob ft VCB=10V,f=1MHz VCE=10V,IC=100mA, f=100MHz C 120-2...