CFD1933 Datasheet PDF | Continental Device India

Continental Device India CFD1933

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CFD1933
Datasheet	CFD1933 Download
Manufacturer	Continental Device India
Description	NPN PLANAR POWER DARLINGTON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C)

DESCRIPTION

SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 80 Collector -Emitter Voltage VEBO 7.0 Emitter Base Voltage IC 4.0 Collector Current DC 6.0 Collector Current (Pulse*) 2.0 Collector Power Dissipation @ Ta=25 deg C PC 30 Collector Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range *Single Pulse Pw=100ms

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 80 Collector Emitter Voltage VCBO IC=50uA, IE=0 80 Collector Base Voltage ICBO VCB=80V, IE=0 Collector Cut off Current IEBO VEB=5V,IC=0 Emitter Cut off Current VCE(Sat)** IC=2A,IB=4mA Collector Emitter Saturation Voltage hFE** IC=2A, VCE=3V 1.0 DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.2A, 40 Transition Frequency f=10MHz Cob VCB=10V, IE=0 35 Collector Output Capacitance f=1MHz **Pulse test UNIT V V V A A W W deg C deg C MAX 100 3.0 1.5 10 - UNIT V V uA mA V K...