Continental Device India CJF15033
PNP SILICON PLANAR POWER TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage RMS Isolation Voltage ( for 1sec,R.H. <30%, TA=25ºC ) Collector Current - Continuous - Peak Base Current Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE From Junction to Ambient From Junction to Case SYMBOL VCBO VCEO VEBO (1) VISOL (a) (b) IC IB PD PD Tj,Tstg Rth (j-a) Rth (j-c) VALUE 250 250 5 3500 1500 8 16 2 50 0.4 2 0.016 -65 to +150 62.5 2.5 UNIT V V V V V A A A W W/ºC W W/ºC ºC ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
Collector Emitter (sus) Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter on Voltage SYMBOL VCEO (sus) * ICBO IEBO hFE * VCE(Sat) * VBE(on) * TEST CONDITION IC=10mA, IB=0 VCB=150V, IE=0 VEB=5V,IC=0 IC=0.5A, VCE=5V IC=1.0A...