Continental Device India CJF3055
NPN SILICON PLANAR POWER TRANSISTOR
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
SYMBOL VALUE UNIT Collector Emitter (Sustaining) Voltage Collector Emitter Voltage Emitter Base Voltage RMS Isolation Voltage ( for 1sec,R.H. <30%, TA=25ºC ) Collector Current Base Current Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VCEO (sus) VCES VEBO (1) VISOL (a) (b) IC IB PD ** PD Tj,Tstg 90 90 5 3500 1500 10 6 30 0.25 2 0.016 - 55 to +150 V V V VRMS VRMS A A W W/ºC W W/ºC ºC THERMAL RESISTANCE From Junction to Ambient From Junction to Case Rth (j-a) Rth (j-c)** 62.5 4 ºC/W ºC/W Lead Temperature for Soldering Purpose TL 260 ºC **Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of >6 in.lbs. (1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRM...