Continental Device India CJF45H11
PNP SILICON PLANAR POWER TRANSISTOR
| Part No. | CJF45H11 |
|---|---|
| Datasheet | CJF45H11 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR POWER TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
SYMBOL VALUE UNIT Collector Emitter Voltage Emitter Base Voltage RMS Isolation Voltage ( for 1sec,R.H. <30%, TA=25ºC ) Collector Current -Continuous - Peak Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VCEO VEBO (1) VISOL (a) (b) IC PD PD Tj,Tstg 80 5 3500 1500 10 20 50 1.67 2 0.016 - 55 to +150 V V VRMS VRMS A A W W/ºC W W/ºC ºC THERMAL RESISTANCE From Junction to Ambient From Junction to Case Rth (j-a) Rth (j-c) 62.5 3.5 ºC/W ºC/W (1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300µs, Duty Cycle<2%)ELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter sustaining Voltage Collector Cut off Current Emitter Cut off Cur...
