CL100A
CL100A is NPN SILICON PLANAR TRANSISTORS manufactured by Continental Device India.
DESCRIPTION
SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A m W m W /°C W m W /°C °C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER
- IC =10m A, IB =0 Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO h FE
- IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150m A,VCE=10V
MIN 50 60 5
UNIT V V V
50 1 40 300 0.9 0.6 n A µA V V
VBE(on)- VCE=1V, IC=150m A, VCE(sat)- IC=150m A,IB=15m A A 40-120 B 100-300
- Pulse Condition : PW <300us, Duty Cycle < 2%
Continental Device India Limited
Data Sheet
Page 1 of 3
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CL 100, A, B CK 100, A, B TO-39 Metal Can Package TO-39 Metal Can Package
2 1 3
PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR
3 2 1
Packing Detail
PACKAGE TO-39 STANDARD PACK Details Net Weight/Qty 500 pcs/polybag 540 gm/500 pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 20K
Data Sheet
All dimensions are in mm
DIM A B C D E F G H J K L
MIN MAX 8.50 9.39 7.74 8.50 6.09 6.60 0.40 0.53
- 0.88 2.41 2.66 4.82 5.33 0.71 0.86 0.73 1.02 12.70
- 42 DEG 48 DEG
OUTER CARTON BOX Size Qty Gr Wt 17" x 15" x 13.5" 32K 40 kgs
Page 2 of 3
Continental Device India Limited
Notes
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