Continental Device India CL100A
NPN SILICON PLANAR TRANSISTORS
APPLICATIONS
. Complementary CK100, A, BABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VCER Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current-Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Total device dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range VCBO VEBO ICM PD PD Tj, Tstg VALUE 50 60 5 1 800 5.33 3 20 -55 to +175 UNITS V V V A mW mW /°C W mW /°C °CELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER * IC =10mA, IB =0 Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Base Emitter On Voltage Collector Emitter (Sat) Voltage CLASSIFICATION HFE BVCBO BVEBO ICBO IEBO hFE * IC =100µA, IE =0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IE=0 IC=150mA,VCE=10V MIN 50 60 5 TYP MAX UNIT V V V 50 1 40 300 0.9 0.6...