CLD863 Datasheet PDF | Continental Device India

Continental Device India CLD863

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CLD863
Datasheet	CLD863 Download
Manufacturer	Continental Device India
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC )

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg VALUE 60 50 5.0 1.0 2.0 0.9 150 - 55 to +150 UNITS V V V A A W ºC ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut Off Current Emitter Cut Off Current DC Current Gain SYMBOL VCBO VCEO VEBO ICBO IEBO *hFE hFE Collector Emitter Saturation Voltage VCE (sat) TEST CONDITION IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 IC=50mA, VCE=2V IC=1A, VCE=2V IC=500mA, IB=50mA NPN PNP Base Emitter Saturation Voltage VBE (sat) IC=500mA, IB=50mA 0.5 0.7 1.2 V V V 60 30 MIN 60 50 5.0 1.0 1.0 320 MAX UNITS V V V µA µA CLB764_CLD863 Rev111209E Continental Device India Limited Data Sheet Page 1 of...