CLL4150 Datasheet PDF | Continental Device India

Continental Device India CLL4150

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CLL4150
Datasheet	CLL4150 Download
Manufacturer	Continental Device India
Description	HIGH SPEED SILICON DIODES
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 µs t=1 ms t=1 s Power Dissipation up to Ta=25ºC Storage Temperature Junction Temperature SYMBOL VRRM VR *IF IFRM IFSM *Ptot Tstg Tj VALUE 75 50 300 600 4.0 1.0 0.5 500 - 65 to 200 200 THERMAL RESISTANCE Junction to tie point Junction to Ambient in free air Rth (j-tp) *Rth (j-a) 300 350

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless otherwise specified)

DESCRIPTION

SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA Reverse Breakdown Voltage VBR IR=100µA Reverse Current IR VR= 50V VR=50V, Tj=150ºC MIN 0.54 0.66 0.76 0.82 0.87 75 DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time Forward Recovery Time Cd trr tfr *Device mounted on an FR4 printed circuit board CLL4150Rev201002E VR=0V, f=1MHz IF=10mA, to IR=1mA,RL=100Ω Measured @ IR=0.1mA IF=200mA, tr =0.4ns Measured @ VF=1V .

CLL4150 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
CLL4150	Central Semiconductor