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CMBD4148 Datasheet PDF

Continental Device India CMBD4148

CMBD1203 is a dual diode, in series CMBD1204 is a dual diode, common cathode CMBD1205 is a dual diode, common anode Marking CMBD1201 – 24 CMBD1202 – 25 CMBD1203 – 26 CMBD1204 – 27 CMBD1205 – 28 CMBD4148 – 5H 2 CMBD1201 3 CMBD4148 1 1 CMBD1202 3 2 2 CMBD1203 3 1 2 CMBD1204 3 1 2 CMBD1205 3 1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Junction temperature Forward voltage at IF = 10 mA VR VRRM IFRM IF Tj VF max.
Part No. CMBD4148
Datasheet CMBD4148 Download
Manufacturer
Continental Device India
Description SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
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CMBD4148 datasheet page 1 preview
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, CMBD4148 are all single diodes max. max. max. max. < 75 V 100 V 500 mA 215 mA 150 ° C 0.855 V Continental Device India Limited Data Sheet Page 1 of 3 CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA trr < 4 ns RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current (per crystal) VR VRRM IFRM IF t = 1 µs t = 1 ms t=1s Storage temperature IFSM IFSM IFSM Tstg Junction temperature Tj max. max. max. max. 75 V 100 V 500 mA 215 mA max. 4A max. 1.0 A max. 0.5 A –55 to +150 ° C max. 150 ° C THERMAL RESISTAN...
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