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SOT-23 Formed SMD Package
CMBT2222 CMBT2222A
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking CMBT2222 = lB CMBT2222A = lP
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
CMBT2222 CMBT2222A
Collector–base voltage (open ernitter) VCB0 Collector–emitter voltage (open base) VCE0 Emitter base voltage (open collector) VEB0 Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 150mA; VCE = 10V hFE lC = 500mA; VCE = 10V Transition frequency at f = 100 MHz fT IC = 20 mA; VCE = 20 V
max. max. max. max. max.