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CMBT4401 - SILICON PLANAR EPITAXIAL TRANSISTORS

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Part number CMBT4401
Manufacturer CDIL
File Size 138.23 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet CMBT4401 Datasheet
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www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 1 V Total power dissipation up to Tamb = 25 °C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage Collector–base voltage Emitter–base voltage Collector current (DC) Total power dissipation up to Tamb = 25°C Storage temperature range Junction temperature VCEO IC hFE Ptot max. max. min. max.
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