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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA92 CMBTA93
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking CMBTA92 = 2D CMBTA93 = 2E
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 10 mA; –VCE = 10 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V Collector–base capacitance at f = 1 MHz IE = 0; –VCB = 20 V –V CBO –V CEO –V EBO –IC Ptot hFE fT C cb CMBT A92 max. 300 max. 300 max. max.
CMBTA93 Datasheet
