Continental Device India CMMT491
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC ICM PD Tj, Tstg VALUE 80 60 5 1 2 500 - 55 to +150 UNITS V V V A A mW ºC Electrical Characterstics (Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain SYMBOL VCBO *VCEO(sus) VEBO ICBO ICES IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE CONDITIONS IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCE=60V, VBE=0 VEB=4V, IC=0 IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA VCE =5V, IC=1A VCE =5V, IC=1mA VCE =5V, IC=500mA VCE =5V, IC=1A VCE =5V, IC=2A VCE=10V, IC=50mA, f=100MHz VCB=10...