Continental Device India CMMT591
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | CMMT591 |
|---|---|
| Datasheet | CMMT591 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 500 mA; VCE = 5 V Transition frequency at f = 100 MHz IC = 50 mA; VCE = 10 V VCBO VCEO VEBO IC ICM IB Ptot Tj hFE max. max. max. max. max. max. max. max. min. max. min. 80 60 5 1 2 200 500 150 100 300 150 MHz V V V A A mA mW °C fT Continental Device India Limited Data Sheet Page 1 of 3 CMMT591 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Peak Pulse current Base current Total power dissipation at Tamb = 25°C Storage temperature Junction temperature VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj max. max. max. max. max. max. max. -55 to max. 80 60 5 1 2 200 500 +150 150 V V V A...
