CP100
CP100 is PNP Silicon Planar Transistor manufactured by Continental Device India.
DESCRIPTION
SYMBOL VALUE V Collector -Base Voltage 60 CBO VCEO Collector -Emitter Voltage 50 VEBO Emitter Base Voltage 7 IC Collector Current Continuous 1 PTA Power Dissipation @Ta=25ºC 800 6 Derate Above 25ºC Tj, Tstg Operating and Storage Junction -55 to +150 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector -Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage VCEO
- VCBO VEBO ICBO IEBO h FE
- VCE(sat)- VBE(on) IC=10m A, IB=0 IC=100µA, IE=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=5V, IE=0 IC=150m A,VCE=1V IC=150m A,IB=15m A IC=150m A,VCE= 1V UNIT V V V A m W m W/ºC ºC
VALUE MIN MAX 50 60 7 50 25 50 280 0.6 0.9
UNIT V V V nΑ nΑ V V
DESCRIPTION
DYNAMIC CHARACTERISTICS Transition Frequency
SYMBOL TEST CONDITION MIN
VALUE TYP
UNIT f T
VCE=10V, IC=50m A, f=20MHz
- Pulse Condition: Pulse Width <300µs, Duty Cycle <2% CLASSIFICATION h FE A 50-120 B 100-200
Continental Device India Limited
Data Sheet
Page 1 of 3
CP100 CN100 TO-237 Plastic Package TO-237 Plastic Package
DIM A B C D E F G H K L J
MIN.
MAX.
1 2 3 K D E 3 2 1
SEC AA
PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR
3 2 1
Packing Detail
PACKAGE TO-237 Bulk TO-237 T&A STANDARD PACK Details Net Weight/Qty 1K/polybag 240 gm/1K pcs 2K/ammo box 725 gm/2K pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 5K 12.5" x 8" x 1.8" 2K
Data Sheet
OUTER CARTON BOX Size Qty Gr Wt 17" x 15" x 13.5" 80K 26.2 kgs 17" x 15" x 13.5" 32K 13.8 kgs
Page 2 of 3
Continental Device India Limited
All diminsions in mm.
4.32 5.33 4.45 5.20 3.18 4.19 0.41 0.55 0.35...