CRD13003BC Datasheet | Continental Device India

DESCRIPTION Collector Base Voltage Collector Emitter (sus) Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Power Dissipation at T a=25ºC Derate Above 25ºC Power Dissipation at T c=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose: 1/8" from Case for 5 Seconds SYMBOL VCBO VCEO VEBO IC - ICM IB - IBM IE - IEM PD PD Tj, Tstg VALUE 700 400 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 45 360 - 65 to+150 UNIT V V V A A A A A A W m W/ ºC W m W/ ºC ºC Rth (j-c) Rth (j-a) TL 2.77 89 275 ºC/W ºC/W ºC - Pulse Test: Pulse Width=5ms, Duty Cycle=10% CRD13003BC(9AC)Rev120705E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON POWER TRANSISTOR CRD13003BC (9AC) (Tin Finish Part) LEAD FREE .. TO-126 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION IC=1m A, IE=0 VCBO Collector Base Voltage - - V I Collector Emitter (sus) Voltage CEO (sus) C=10m A, IB=0 ICBO VCB=700V, IE=0 Collector Cut Off Current VCB=700V, IE=0, Tc=100ºC IEBO VEB=9V, IC=0 Emitter Cut Off Current - - h FE IC=0.5A, VCE=5V DC Current Gain IC=2A, VCE=5V Collector Emitter Saturation Voltage - - VCE (sat) IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A,Tc=100ºC Base Emitter Saturation Voltage - - VBE (sat) IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, Tc=100ºC DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain Bandwidth Product Output Capacitance SWITCHING TIME DESCRIPTION Turn on Time Fall Time Storage Time SYMBOL ton tf tstg TEST CONDITION VCC=125V IB1=0.2A, IB2=0.2A IC=1A MIN 700 400 15 4.0 - TYP - MAX 1.0 5.0 1.0 22 25 0.5 1.0 2.5 1.0 1.0 1.2 1.1 UNIT V V m A m A m A V V V V V V V SYMBOL f T Cob TEST CONDITION IC=100m A, VCE=10V, f=1MHz VCB=10V,...