Continental Device India CSA1029
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Operating And Storage Junction Temperature Range VCBO VEBO IC IE PC Tj, Tstg VALUE 30 30 5.0 100 100 200 -55 to +150 UNIT V V V mA mA mW ºCELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Base Emitter On Voltage Collector Emitter Saturation Voltage SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IEBO hFE VBE(on) VCE(sat)* IC=1mA,IE=0 IC=10µA,IE=0 IE=10µA, IC=0 VCB=18V, IE = 0 VBE=2V, IC = 0 VCE=12V,IC=2mA IC=2mA,VCE=12V IC=10mA,IB=1mA 100 <0.4 MIN 30 30 5.0 500 500 500 0.75 0.20 TYP MAX UNIT V V V nΑ nA V V Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC458 TO-92 Pl...