CSA1585BC Datasheet PDF | Continental Device India

Continental Device India CSA1585BC

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSA1585BC
Datasheet	CSA1585BC Download
Manufacturer	Continental Device India
Description	NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL VALUE BVCBO 40 Collector -Base Voltage BVCEO 20 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current ICP* 5.0 Collector Current Peak PC 0.4 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range *Single Pulse Pw=10ms

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN VCBO IC=50uA, IE=0 40 Collector Base Voltage VCEO IC=1mA, IB=0 20 Collector Emitter Voltage VEBO IE=50uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=30V, IE=0 Collector Cut off Current ICEO VCE=20V, IB=0 IEBO VEB=5V, IC=0 Emitter Cut off Current hFE VCE=2V, IC=0.1A 180 DC Current Gain VCE(Sat) IC=2A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V,IC=0.5A, Transition Frequency f=100MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz UNIT V V V A A W deg C TYP 150 35 MAX 0.1 1.0 0.1 39...