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CSA950 Datasheet PDF

Continental Device India CSA950

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. CSA950
Datasheet CSA950 Download
Manufacturer
Continental Device India
Description PNP SILICON PLANAR EPITAXIAL TRANSISTOR
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CSA950 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IE PC Tj, Tstg VALUE 30 35 5 800 800 600 -55 to +150 UNIT V V V mA mA mW ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain SYMBOL TEST CONDITION V(BR)CEO IC=10mA,IB=0 ICBO IEBO hFE (1) hFE (2) VCB=35V, IE = 0 VEB=5V, IC = 0 VCE=1V,IC=100mA VCE=1V,IC=700mA 100 35 0.7 0.5 0.5 120 0.8 V V V MHz MIN 30 0.1 0.1 320 TYP MAX UNIT V µA µA Collector Emitter Saturation Voltage VCE(sat)* IC=500mA,IB=20mA CSA950 CSC2120 Base Emitter On Voltage Transition Frequency Collector Output Capacitance CSA950 CSC2120 VBE (on) VCE = 5V, IC= 10mA fT Cob IC=10mA, VCE=5V VCB=10V, IE=0 f=1MHz 19 13 Y : 160-320 pF pF CLASSIFICATION hFE (1) O : 100-200 *Pulse Condition: Width < 300µ s, Duty Cycle < 2%.
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