CSB1370 Datasheet PDF | Continental Device India

Continental Device India CSB1370

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSB1370
Datasheet	CSB1370 Download
Manufacturer	Continental Device India
Description	PNP Silicon Epitaxial Power Transistor
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C)

DESCRIPTION

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=5MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120; CSB 1370 D E : 100 -200 CSB 1370 E VALUE 60 60 5.0 3.0 6.0 2.0 30 150 -55 to +150...