CSB764 Datasheet | Continental Device India

DESCRIPTION SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current Peak Collector Current Collector Power Dissipation Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 5.0 1.0 2.0 0.9 150 - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut Off Current VCBO VCEO VEBO ICBO IC=10µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 Emitter Cut Off Current IEBO VEB=4V, IC=0 DC Current Gain Collector Emitter Saturation Voltage - h FE h FE VCE (sat) IC=50m A, VCE=2V IC=1A, VCE=2V IC=500m A, IB=50m A NPN PNP Base Emitter Saturation Voltage VBE (sat) IC=500m A, IB=50m A MIN 60 50 5.0 60 30 DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance f T VCE=10V, IC=50m A Cob VCB=10V,IE=0,...