CSB764 Datasheet PDF | Continental Device India

Continental Device India CSB764

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSB764
Datasheet	CSB764 Download
Manufacturer	Continental Device India
Description	EPITAXIAL PLANAR SILICON TRANSISTORS
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APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC )

DESCRIPTION

SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Peak Collector Current ICP Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 5.0 1.0 2.0 0.9 150 - 55 to +150

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut Off Current VCBO VCEO VEBO ICBO IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 Emitter Cut Off Current IEBO VEB=4V, IC=0 DC Current Gain Collector Emitter Saturation Voltage *hFE hFE VCE (sat) IC=50mA, VCE=2V IC=1A, VCE=2V IC=500mA, IB=50mA NPN PNP Base Emitter Saturation Voltage VBE (sat) IC=500mA, IB=50mA MIN 60 50 5.0 60 30 DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance fT VCE=10V, IC=50mA Cob VCB=10V,IE=0, f=1MHz NPN PNP CLASSIFICATION *hFE CSB764_CSD863Rev02...