Continental Device India CSB857
PNP/NPN SILICON POWER TRANSISTOR
| Part No. | CSB857 |
|---|---|
| Datasheet | CSB857 Download |
| Manufacturer |  Continental Device India |
| Description | PNP/NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
857 1133 max. 70 max. 50 max. max. max. max. min. max. 857 1133 max. 70 max. 50 max. 858 1134 70 V 60 V 4.0 A 40 W 150 °C 1.0 60 320 858 1134 70 V 60 V 5.0 V V Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 2 A; IB = 200 mA D.C. current gain IC = 1 A; VCE = 4 V All diminsions in mm. Data Sheet K VCBO VCEO IC Ptot Tj VCEsat hFE RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO Continental Device India Limited Page 1 of 3 CSB857, CSB858 CSD1133, CSD1134 Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 50...
