Continental Device India CSC1009
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
| Part No. | CSC1009 |
|---|---|
| Datasheet | CSC1009 Download |
| Manufacturer |  Continental Device India |
| Description | PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg C )DESCRIPTION
SYMBOL CSA709 CSC1009 VCBO 160 160 Collector -Base Voltage VCEO 150 140 Collector -Emitter Voltage VEBO 8.0 8.0 Emitter -Base Voltage IC 700 700 Collector Current PC 800 800 Collector Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION CSA709 CSC1009 VCBO IC=100uA.IE=0 >160 >160 Collector -Base Voltage VCEO IC=10mA,IB=0 >150 >140 Collector -Emitter Voltage VEBO IE=100uA, IC=0 >8.0 >8.0 Emitter-Base Voltage ICBO VCB=60V, IE=0 <100 Collector-Cut off Current VCB=100V, IE=0 <100 IEBO VEB=5V, IC=0 <100 <100 Emitter-Cut off Current hFE* IC=50mA,VCE=2V 40-400 40-400 DC Current Gain <0.4 <0.7 Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA VBE(Sat) * IC=200mA,IB=20mA <1.1 <1.1 Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Out-Put Capacitance UNIT V V V mA m...
