Datasheet Details
| Part number | CSC1047 |
|---|---|
| Manufacturer | CDIL |
| File Size | 197.44 KB |
| Description | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| Datasheet | CSC1047_CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1047 TO-92 Plastic Package … E CB www.DataSheet4U.
| Part number | CSC1047 |
|---|---|
| Manufacturer | CDIL |
| File Size | 197.44 KB |
| Description | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| Datasheet | CSC1047_CDIL.pdf |
|
|
|
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 30 20 3 15 *400 150 - 55 to +150 UNITS V V V mA mW ºC ºC *PC=250mW / Potting type: PC=250mW ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Base Voltage Emitter Base Voltage DC Current Gain Transition Frequency Base Emitter On Voltage Common Emitter ReverseTransfer Capacitance Power Gain Noise Figure SYMBOL VCBO VEBO *hFE fT VBE(on) Cre PG NF TEST CONDITION IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 6V, - IC = 1mA VCE = 6V, - I C= 1mA VCE = 6V, - IC = 1mA VCB = 6V, - IE = 1mA, f=10.7MHz VCB =6V, - IE = 1mA, f=100 MHz VCB =6V, - IE = 1mA, f=100 MHz 20 5 MIN 30 3 40 450 0.72 1 260 MHz V pF dB dB TYP MAX UNITS V V *hFE Classifications B : 40 - 110 C : 65 - 160 D : 100 - 260 Continental Device India Limited Data Sheet Page 1 of 3 CSC1047 TO-92 Plastic Package TO- 92 Plastic Package TO-92 Transistors on Tape and Ammo Pack B Dimension With 'L' Uncontrolled Mechanical Data h T h A H3 H1 H2 C1 C2 L W2 Wo A1 P (p) h1 h1 Ammo Pack Style Adhesive Tape on Top Side ED FE Carrier Strip Label W1 W Flat side A Ho 186 (7.3") L www.DataSheet4U.com t1 t F1 F P2 F2 Do 332 (13 ") Solderability Ensured Po (1.
43 7") SPECIFICATION SYMBOL A1 A T P Po P2 F h h1 W Wo W1 W2 Ho H1 L Do t F1, F2 H2 H3 | C1 - C2 | (P) 0.45 MIN.
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