CSC1047 Datasheet PDF | Continental Device India

Continental Device India CSC1047

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSC1047
Datasheet	CSC1047 Download
Manufacturer	Continental Device India
Description	NPN EPITAXIAL SILICON POWER TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 30 20 3 15 *400 150 - 55 to +150 UNITS V V V mA mW ºC ºC *PC=250mW / Potting type: PC=250mW

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Base Voltage Emitter Base Voltage DC Current Gain Transition Frequency Base Emitter On Voltage Common Emitter ReverseTransfer Capacitance Power Gain Noise Figure SYMBOL VCBO VEBO *hFE fT VBE(on) Cre PG NF TEST CONDITION IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCE = 6V, - IC = 1mA VCE = 6V, - I C= 1mA VCE = 6V, - IC = 1mA VCB = 6V, - IE = 1mA, f=10.7MHz VCB =6V, - IE = 1mA, f=100 MHz VCB =6V, - IE = 1mA, f=100 MHz 20 5 MIN 30 3 40 450 0.72 1 260 MHz V pF dB dB TYP MAX UNITS V V *hFE Classifications B : 40 - 110 C : 65 - 160 D : 100 - 260 Continental Device India Limite...