• Part: CSC2120
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 87.91 KB
Download CSC2120 Datasheet PDF
Continental Device India
CSC2120
DESCRIPTION SYMBOL VALUE VCBO 35 Collector -Base Voltage VCEO 30 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 800 Collector Current Continuous IE 800 Emitter Current PC 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN ICBO VCB=35V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current VCEO IC=10m A, IB=0 30 Collector -Emitter Voltage h FE- (1) IC=100m A, VCE=1V 100 DC Current Gain h FE- (2) IC=700m A, VCE=1V 35 Collector Emitter Saturation Voltage VCE(Sat) - IC=500m A, IB=20m A VBE(on) IC=10m A, VCE=1V 0.5 Base Emitter Voltage Dynamic Characteristics Cob VCB=10V, IE=0, Collector Output Capacitance f=1MHz ft VCE=5V,IC=10m A, Transition Frequency - (1)h FE CLASSIFICATION 0 : 100 - 200, - Pulse Test : Pulse Width =300us, Duty Cycle=2% UNIT V V V m A m A m W deg C TYP 13 MAX 100 100 320 0.5 0.8 - UNIT n A n A...