CSC2120 Description
Pulse Width =300us, Duty Cycle=2% UNIT V V V mA mA mW deg C TYP 13 MAX 100 100 320 0.5 0.8 - UNIT nA nA V V V pF 120 Y : 4.32 4.45 3.18 0.41 0.35 MAX. EMITTER 5 DEG 1.14 1.40 1.14 1.53 12.70 N OT ES 1.
CSC2120 is NPN SILICON EPITAXIAL TRANSISTOR manufactured by Continental Device India.
| Part Number | Description |
|---|---|
| CSC2001 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| CSC2002 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2073 | NPN PLASTIC POWER TRANSISTOR |
| CSC2229Y | NPN SILICON HIGH VOLTAGE TRANSISTOR |
| CSC2233 | NPN PLASTIC POWER TRANSISTOR |
Pulse Width =300us, Duty Cycle=2% UNIT V V V mA mA mW deg C TYP 13 MAX 100 100 320 0.5 0.8 - UNIT nA nA V V V pF 120 Y : 4.32 4.45 3.18 0.41 0.35 MAX. EMITTER 5 DEG 1.14 1.40 1.14 1.53 12.70 N OT ES 1.