CSC2240 Datasheet | Continental Device India

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified pany TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20 4,19 0,55 0,50 1,40 1,53 - 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Emitter Current Power Dissipation Operating and Storage Junction Temperature Range Symbol V CBO V CEO V EBO IC IE PD T j ,Tstg Value 120 120 5 100 100 300 -55 to +150 Unit V V V m A m A m W °C Continental Device India Limited Data Sheet Page 1 of 5 CSA970 CSC2240 ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified) Characteristic Unit Collector Cutoff Current VCB=120V, IE=0 Emitter Cutoff Current VEB=5V, IC=0 Collector Emitter Voltage IC=1m A, IB=0 D.C. Current Gain VCE=6V, I C=2m A Collector Emitter Saturation Voltage IC=10m A, I B=1m A Base Emitter On Voltage VCE=6V, I C=2m A DYNAMIC CHARACTERISTICS Transition Frequency VCE=6V, I C=1m A Collector Output Capacitance VCB =10V, IE=0, f=1MHz Noise Figure VCE=5V, I C=250u A Rg=1kΩ, f=10Hz to 15.7 k Hz VCE=6V, IC=100u A, f=1KHz Rg=100Ω h FE Classification Symbol Min Typ Max ICBO IEBO BV CEO h FE VCE(sat) VBE (on) 120 200 - 0.65 100 100 700 0.3 - n A n A V V V f T CSA970 CSC2240 C ob - 100 4.0 3.0...