Continental Device India CSC2330
NPN SILICON HIGH VOLTAGE TRANSISTOR
| Part No. | CSC2330 |
|---|---|
| Datasheet | CSC2330 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON HIGH VOLTAGE TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 deg C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Ambient SYMBOL VCBO VCEO VEBO IC PD Tj, Tstg Rth (j-a) VALUE 300 300 7.0 100 1.0 -55 to +150 130 UNIT V V V mA W deg C deg C/WELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector -Base Voltage VCBO IC=100uA, IE=0 300 Collector -Emitter Voltage VCEO IC=5mA, IB=0 300 Emitter Base Voltage VEBO IE=100uA, IC=0 7.0 Collector Cut off Current ICBO VCB=200V, IE=0 - Emitter Cut off Current IEBO VEB=3V, IC=0 - DC Current Gain hFE IC=2