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CSC2655 Datasheet PDF

Continental Device India CSC2655

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. CSC2655
Datasheet CSC2655 Download
Manufacturer
Continental Device India
Description COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
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CSC2655 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PC Tj, Tstg VALUE 50 50 5 2 900 -55 to +150 UNIT V V V A mW ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Emitter Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Gain Bandwidth Product Output Capacitance SYMBOL TEST CONDITION BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) IC=10mA,IB=0 VCB=50V, IE = 0 VEB=5V, IC = 0 VCE=2V,IC=500mA * VCE=2V,IC=1.5A IC=1A, IB=50mA IC=1A, IB=50mA min 50 70 40 typ max 1.0 1.0 240 0.5 1.2 V V UNIT V µA µA fT Cob IC=500mA, VCE=2V IE=0, VCB=10V,f=1MHz PNP NPN Y 120 - 240 100 40 30 0.1 1.0 0.1 - MHz PF PF Switching Time Turn on Time Storage Time Fall...
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