Continental Device India CSC2712
SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | CSC2712 |
|---|---|
| Datasheet | CSC2712 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (peak value) Total power dissipation at Tamb = 25°C Junction temperature D.C. current gain –IC = 2 mA; –VCE = 6V Transition frequency IC = 1 mA; VCE = 10 V Noise figure at RS = 10 KW IC = 0.1 mA; VCE = 6V; f = 1 kHz VCBO VCEO VEBO IC Ptot Tj hFE max. max. max. max. max. max. min. max. min. 60 50 5 150 150 150 70 700 V V V mA mW °C fT 80 MHz F max 10 dB Continental Device India Limited Data Sheet Page 1 of 3 CSC2712 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Base current Total power dissipation at Tamb = 25°C Junction temperature Storage temperature VCBO VCEO VEBO IC IB Ptot Tj Tstg max. 60 max. 50 max. 5 max. 150 max. 30 max. 150 max. 150 –50 to +150 V V V mA mA mW °C °C C...
