CSC3063 Datasheet PDF | Continental Device India

Continental Device India CSC3063

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSC3063
Datasheet	CSC3063 Download
Manufacturer	Continental Device India
Description	NPN EPITAXIAL SILICON POWER TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO ICP IC PC Tj Tstg Value 300 300 7 200 100 1.2 150 - 55 to +150 UNIT V V V mA mA W ºC ºC

ELECTRICAL CHARACTERISTICS

(Tc=25ºC unless specified otherwise ) DataSheet4U.com

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage DC Current Gain Collector Emitter On Voltage Collector Emitter Saturation Voltage Dynamic Characteristics Transition Frequency Output Capacitance SYMBOL VCBO VCEO VEBO hFE VBE (on) VCE (sat) TEST CONDITION IC=10µA, IE=0 IC=0.1mA, IB=0 IE=10µA, IC=0 IC=5mA, VCE=50V IC=30mA, VCE=10V IC=30mA, IB=3mA MIN 300 300 7 50 TYP MAX DataShee UNIT V V V 250 1.2 1.5 V V fT Cob IC=20mA, VCB=30V, IE=0,VCB=30V, f=0.1MHz 70 2.4 MHz pF DataSheet4U.com Continental Device India Limited Data Sheet Page 1 of 3 DataSheet 4...