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CSC3255 - NPN SILICON EPITAXIAL POWER TRANSISTOR

General Description

SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 10.0 Collector Current ICP 12.0 Peak 40.0 Collector Power Dissipation @ Tc=25 deg C PC Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range DataSheet4U.com Specified) EL

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Datasheet Details

Part number CSC3255
Manufacturer CDIL
File Size 281.02 KB
Description NPN SILICON EPITAXIAL POWER TRANSISTOR
Datasheet download datasheet CSC3255 Datasheet

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www.DataSheet4U.com Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSC3255 TO-220 High-Speed Switching Applications. Complementary CSA1291 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 80 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 10.0 Collector Current ICP 12.0 Peak 40.0 Collector Power Dissipation @ Tc=25 deg C PC Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range DataSheet4U.com Specified) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter Voltage VCBO IC=1mA, IE=0 80 Collector Base Voltage VEBO IE=1mA, IC=0 5.