CSC388ATM Datasheet PDF | Continental Device India

Continental Device India CSC388ATM

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSC388ATM
Datasheet	CSC388ATM Download
Manufacturer	Continental Device India
Description	NPN Silicon Planar Epitaxial Transistor
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC )

DESCRIPTION

Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Operating And Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj, Tstg VALUE 30 25 4 50 - 50 300 -55 to +125 UNIT V V V mA mA mW ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

Collector Cut off Current Emitter Cut off Current Collector Emitter Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Output Capacitance Collector- Base Time Constant Transition Frequency Power Gain SYMBOL TEST CONDITION ICBO IEBO VCEO hFE VCE(sat) VBE(sat) Cob Cc.rbb' fT Gpe VCB=30V, IE = 0 VEB=3, IC=0 IC=10mA, IB=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCB=10V, IE=0,f=1MHz VCB=10V, IE= - 1mA f=30MHz VCE=12.5V, IC=12.5mA VCC=12.5V, IE= - 12.5mA f=45MHz MIN 25 20 0.8 300 28 TYP MAX 100 1.0 200 0.2 1.5 2.