CSC5200F Datasheet PDF | Continental Device India

Continental Device India CSC5200F

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSC5200F
Datasheet	CSC5200F Download
Manufacturer	Continental Device India
Description	NPN SILICON POWER TRANSISTOR
Buy	Stock & Price

APPLICATIONS

. Complementary CSA1943F

MAXIMUM RATINGS

(Ta=25 deg C)

DESCRIPTION

SYMBOL VALUE VCBO 160 Collector -Base Voltage VCEO 160 Collector -Emitter Voltage VEBO 5.0 Emitter -Base Voltage IC 12 Collector Current IB 1.2 Base Current PC 90 Power Dissipation @ Tc=25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN TYP ICBO VCB=160V, IE=0 Collector-Cuttoff Current IEBO VEB=5V, IC=0 Emitter-Cuttoff Current VCEO IC=50mA, IB=0 160 Collector -Emitter Voltage hFE IC=1A,VCE=5V 55 DC Current Gain IC=7A,VCE=5V 35 VCE(Sat) IC=8A, IB=0.8A Collector Emitter Saturation Voltage VBE(on) IC=7A,VCE=5V Base Emitter on Voltage ft VCE=5V, IC=1A 30 Transition Frequency Cob VCB=10V, IE=0 200 Collector Output Capacitance f=1MHz *hFE Classification : R : 55-110, O : 80-160 UNIT V V V A A W deg C MAX 5.0 5.0 160 3.0 1.5 - UNIT uA uA V V V MHz pF Continental Device India Limited Data Sheet Page 1 of 2 TO-3P (TO-218) Plastic Package A D B C DIM A B C D E F G H K L M N P S MIN .